منابع مشابه
Growth of Thin Hetero-ep1taxial Layers of Graphite and Diamond on Sic for Carbon Based Electronics
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متن کاملSimulations of C60 bombardment of Si, SiC, diamond and graphite
Molecular dynamics simulations of the 20-keV C60 bombardment at normal incidence of Si, SiC, diamond and graphite targets were performed. The unique feature of these targets is that strong covalent bonds can be formed between carbon atoms from the C60 projectile and atoms in the solid material. The mesoscale energy deposition footprint (MEDF) model is used to gain physical insight into how the ...
متن کاملHigh Temperature Power Electronics – Application Issues of SiC devices
High temperature operation capability of power devices enhances performance of the system especially in the automotive industry where weight and volume are critical factors. SiC devices are capable of operating at higher voltages, higher frequencies, and higher junction temperatures, which result in significant reduction in weight and size of the power converter and an increase in efficiency. I...
متن کاملDrilling Mechanism Investigation on SiC Ceramic Using Diamond Bits
Results and Conclusions: The results show that, brittle fracture is the dominant way for SiC ceramic’s removal mechanism, plastic deformation always exists during the drilling process. Brittle fracture includes cleavage fracture, transgranular fracture, intergranular fracture, material peeling off and grain boundary breakage; resintering and recrystallization happen under the joint action of gr...
متن کاملTheoretical predictions of a bucky-diamond SiC cluster.
A study of structural relaxations of Si(n)C(m) clusters corresponding to different compositions, different relative arrangements of Si/C atoms, and different types of initial structure, reveals that the Si(n)C(m) bucky-diamond structure can be obtained for an initial network structure constructed from a truncated bulk 3C-SiC for a magic composition corresponding to n = 68 and m = 79. This stud...
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ژورنال
عنوان ژورنال: III-Vs Review
سال: 2006
ISSN: 0961-1290
DOI: 10.1016/s0961-1290(06)71593-9